Scaling of High‐Performance Organic Permeable Base Transistors
نویسندگان
چکیده
منابع مشابه
Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transport
For the iirst time, we show a departure from the conventional dependence of fi on base thickness xs in abrupt junction n-p-n heterojunction bipolar transistors (HBTs). This is to be contrasted with the familiar fl a l/xi found in homojunction bipolar transistors where current gain is limited by diffusive base transport. Our data, combined with high frequency and collector breakdown measurements...
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ژورنال
عنوان ژورنال: Advanced Electronic Materials
سال: 2018
ISSN: 2199-160X,2199-160X
DOI: 10.1002/aelm.201800728